Diodes ZXMHN6A07T8 - Manual (Page 4)

ZXMHN6A07T8
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2004
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage V
(BR)DSS
60 V I
D
= 2 5 0 ␮A, V
GS
= 0 V
Zero gate voltage drain current I
DSS
1.0 ␮A V
DS
= 6 0 V , V
GS
= 0 V
Gate-body leakage I
GSS
100 nA V
GS
= ± 2 0 V , V
DS
= 0 V
Gate-source threshold voltage V
GS(t h)
1.0 3.0 V I
D
= 2 5 0 ␮A, V
DS
= V
GS
Static drain-source on-state
resistance
(1 )
R
DS(on)
0.3
0.45
⍀
⍀ V
GS
= 1 0 V , I
D
= 1 . 8 A
V
GS
= 4 . 5 V , I
D
= 1 . 3 A
Forward transconductance (1 ) (3 ) g
f s
2.3 S V
DS
= 1 5 V , I
D
= 1 . 8 A
DYNAMIC
(3 )
Input capacitance C
iss
166 pF
V
DS
= 4 0 V , V
GS
= 0 V
f= 1 MHz
Output capacitance C
oss
20 pF
Reverse transfer capacitance C
rss
9 pF
SWITCHING
(2 ) (3 )
Turn-on-delay time t
d(on)
1.8 ns
V
DD
= 3 0 V , I
D
= 1 . 8 A
R
G
@ 6.0W, V
GS
= 1 0 V
Rise time t
r
1.4 ns
Turn-off delay time t
d(of f )
4.9 ns
Fall time t
f
2.0 ns
Total gate charge Q
g
3.2 nC
V
DS
= 3 0 V , V
GS
= 1 0 V
I
D
= 1 . 8 A
Gate-source charge Q
gs
0.7 nC
Gate drain charge Q
gd
0.8 nC
SOURCE-DRAIN DIODE
Diode forward voltage (1 ) V
SD
0.95 V T
j
= 2 5 ° C, I
S
= 0 . 4 5 A,
V
GS
= 0 V
Reverse recovery time (3 ) t
rr
21 ns T
j
= 2 5 ° C, I
F
= 1 . 0 A,
di/ dt= 1 0 0 A/ ␮s Reverse recovery charge (3 ) Q
rr
21 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25° C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.