Diodes ZXMHC6A07N8 - Manual

Issue 1.0 - March 2009 1
© Diodes Incorporated
www.diodes.com
A Product Line of
Diodes Incorporated
ZXMHC6A07N8
60V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V
(BR)DSS
Q
G
R
DS(on)
I
D
T
A
= 25
°C
N-CH 60V 3.2nC
0.25 Ω @ V
GS
= 10V 1.8A
0.35 Ω @ V
GS
= 4.5V 1.5A
P-CH -60V 5.1nC
0.40 Ω @ V
GS
= -10V -1.4A
0.60 Ω @ V
GS
= -4.5V -1.2A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
• 2 x N + 2 x P channels in a SOIC package
Applications
• DC Motor control
• DC-AC Inverters
Ordering information
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMHC6A07N8TC 13 12 2,500
Device marking
ZXMHC
6A07
P1S/P2S
N1S/N2S
P1G P2G
N2G N1G
P1D/N1D P2D/N2D