Zxmhc6a07n8 – Diodes ZXMHC6A07N8 User Manual

Page 2

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ZXMHC6A07N8

Issue 1.0 - March 2009 2

© Diodes Incorporated

www.diodes.com


Absolute maximum ratings

Parameter Symbol

N-

channel

P-

channel

Unit

Drain-Source voltage

V

DSS

60 -60 V

Gate-Source voltage

V

GS

±20

±20

V

Continuous Drain current @ V

GS

= 10V; T

A

=25

°C

(b)

@ V

GS

= 10V; T

A

=70

°C

(b)

@ V

GS

= 10V; T

A

=25

°C

(a)

@ V

GS

= 10V; T

L

=25

°C

(f)

I

D

1.80

1.40

1.39

1.42

-1.42

-1.28

-1.28

-1.33

A

Pulsed Drain current @ V

GS

= 10V; T

A

=25

°C

(c)

I

DM

7.10 -6.03 A

Continuous Source current (Body diode) at T

A

=25

°C

(b)

I

S

1.00 -1.00 A

Pulsed Source current (Body diode) at T

A

=25

°C

(c)

I

SM

7.10 -6.03 A

Power dissipation at T

A

=25

°C

(a)

Linear derating factor

P

D

0.87

6.94

W

mW/

°C

Power dissipation at T

A

=25

°C

(b)

Linear derating factor

P

D

1.36

10.9

W

mW/

°C

Power dissipation at T

L

=25

°C

(f)

Linear derating factor

P

D

0.90

7.19

W

mW/

°C

Operating and storage temperature range

T

j

, T

stg

-55 to 150

°C

Thermal resistance

Parameter Symbol

Value

Unit

Junction to ambient

(a)

R

θJA

144

°C/W

Junction to ambient

(b)

R

θJA

92

°C/W

Junction to ambient

(d)

R

θJA

106

°C/W

Junction to ambient

(e)

R

θJA

254

°C/W

Junction to lead

(f)

R

θJL

139

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still

air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.

(b) Same as note (a), except the device is measured at t

≤ 10 sec.

(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the

maximum junction temperature.

(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still

air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.

(e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when

operating in a steady-state condition with one active die.

(f)

Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition with one active die.

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