Diodes ZXMHC6A07T8 - Manual (Page 2)

ZXMHC6A07T8
ISSUE 2 - MAY 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R θJA 94.5 °C/W
Junction to Ambient
(b)(d)
R θJA 73.3 °C/W
THERMAL RESISTANCE
Notes:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with
the heatsink split into two equal areas, one for each drain connection.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t ≤ 10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300 ␮s pulse width limited by maximum junction temperature. Refer
to Transient Thermal Impedance graph.
(d) For device with one active die.
PARAMETER SYMBOL N-Channel P-Channel UNIT
Drain-Source Voltage V
DSS
60 -60 V
Gate-Source Voltage V
GS
Ϯ20 Ϯ20 V
Continuous Drain Current@V
GS
=10V; T
A
=25 ЊC (b)(d)
@V
GS
=10V; T
A
=70 ЊC (b)(d)
@V
GS
=10V; T
A
=25 ЊC (a)(d)
I
D
1.8
1.4
1.6 -1.5
-1.2
-1.3 A
A
Pulsed Drain Current
(c)
I
DM
8.4 -7.2 A
Continuous Source Current (Body Diode) (b) I
S
2.3 -2.1 A
Pulsed Source Current (Body Diode)
(c)
I
SM
8.4 -7.2 A
Power Dissipation at T
A
=25°C
(a)(d)
Linear Derating Factor
P
D
1.3
10.4
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS