Diodes ZXLD1320 - Manual (Page 6)

ZXLD1320
Issue 1 - January 2008 6 www.zetex.com
© Zetex Semiconductors plc 2008
DC-DC converter output parameters
Switching NPN transistor
NOTES:
(b) Measured under pulse conditions.
(c) This current is measured via the collectors and emitters of the switch with these connected to ground (0V)
(d) Measured under pulse conditions. Peak Current = Ic
Symbol Parameter Conditions Min Typ Max Units
Toff(100) Discharge pulse width 100% Output current 0.7 1.2 1.7 µs
Toff(10) Discharge pulse width 10% Output current 4 8 12 µs
f
LXmax
Maximum operating
frequency 600 KHz
V
OH(POK)
POK flag high level output
voltage 4V<VIN<18V
Output sourcing 0.3µA 2 VIN V
V
OL(POK)
POK flag low level output
voltage Output sinking 1mA 0 0.4 V
T
(POK)
POK assertion delay time Switch permanently on 300 500 700 µs
Symbol Parameter Conditions Min Typ Max Units
I SW Average continuous switch
current (b)
1.5 A
I
BON(max)
Maximum base current into
switch transistor from internal
drive circuit
(c)
4V<VIN<18V
BIAS pin at 0V 30 50 70 mA
I
BON
Base current into switch
transistor using external
resistor (R
BASE
) from BIAS pin
to ground
R
BIAS
= 1680
Ω
10 mA
V
(BR)CE
Collector-Emitter breakdown
voltage I
C
=10µA 20 V
V
CE(sat)
Collector-Emitter saturation
voltage I
C
=0.1A, I
B
=10mA
I
C
=2A, I
B
=50mA (d)
50
120
mV
mV
h
FE
Static forward current transfer
ratio I
C
=200mA, V
CE
=2V
I
C
=2A, V
CE
=2V
209
116
C
OBO
Output capacitance V
CB
=10V,f=1MHz 64 pF
t(on) Turn-on time Ic=0 to I
C
=2A
V
IN
=10V
30 ns
t(off) Turn-off time I
C
=2A to Ic<100µA 28 ns