Diodes ZXCT1032 - Manual (Page 3)

ZXCT1032
Issue 4 - June 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
V
IN+
max (a) ...................................................................................................... 28 V
Voltage on any pin relative to GND ............................................................. -0.6V and V
IN
+0.5 V
Maximum differential voltage between V
IN+
and V
IN-
(V
SENSE
) ................ 500 mV
Junction temperature range ........................................................................ -40 to 150°C
Storage temperature range .......................................................................... -55 to 150°C
Operation above the absolute maximum rating may cause device failure. Operation at the
absolute maximum ratings, for extended periods, may reduce device reliability.
NOTES:
(a) Up to a maximum of 24 hours
Recommended operating conditions
Electrical characteristics
Test conditions T
amb
= 25°C, V
IN+
= 20V. Unless otherwise stated.
Symbol Parameter Min. Max. Units
V
IN+
Supply range 9.5 21 V
T
A
Ambient temperature range -40 85 °C
V
FLAG
Flag voltage range 0 V
IN+
V
V
ISET
Voltage on ISET pin 1 2.5 V
Symbol Parameter Conditions Min. Typ. Max. Units
I
Q
Quiescent current V
SENSE
1 = 0V, V_
ISET
= 2.1V 1.6 2.5 mA
V
STRIP
(*)
NOTES:
(*) V
SENSE
= V
IN+
- V
IN-
. V
STRIP
is the sense voltage at which the device trips into over-current protection.
Flag trip threshold
voltage V
ISET
=1.1V 95 mV
V
ISET
=2.1V 185 195 205
V
ISET
ISET open voltage I
ISET
= 0 2.0 2.1 2.2 V
I
ISET
ISET output current V
ISET
=0V 30 45 60
␮A
V
DRIVEH
Drive high output
voltage V
ISET
= 2.1V, V
SENSE
> 205mV,
I
DRIVE
= 0,
V
IN-
– 0.4
V
IN-
– 0.2
V
V
DRIVEL
Drive low output voltage V
ISET
= 2.1V, V
SENSE
< 185mV,
I
DRIVE
= 0,
V
IN-
- 7
V
IN-
- 5.5
V
IN-
-
4
V
R
DRIVEL
Drive low output resistance V
ISET
= 2.1V, V
SENSE
< 185mV 9 k
⍀
V
FLAGL
Flag Low output Voltage V
ISET
= 2.1V, V
SENSE
> 205mV
I
FLAG
= 100µA
0.2 0.4 V
I
FLAGZ
Flag open circuit leakage
current V
ISET
= 2.1V, V
SENSE
< 185mV,
V
FLAG
= 5V
1 200 nA
I
IN-
IN- bias current V
ISET
= 0V 100 200 nA
V
STRIP-TC
Temperature coefficient
of trip voltage See footnote (†)
(†) Temperature dependent measurements are extracted from characterization and simulation results.
95 ppm/°C
I
CT-CHG
Capacitor C
T
charging
current
FLAG = Open 130 200 270
␮A
I
CT-DIS
Capacitor C
T
discharging
current
FLAG = Low 1.8 3.3 5.4
␮A