Zxct1080, High voltage high-side current monitor, Electrical characteristics – Diodes ZXCT1080 User Manual

Page 3

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ZXCT1080

HIGH VOLTAGE HIGH-SIDE CURRENT MONITOR

ZXCT1080

Document number: DS33454 Rev. 4 - 2

3 of 11

www.diodes.com

December 2011

© Diodes Incorporated

Electrical Characteristics

T

A

= 25

°C, V

IN

= 12V, V

CC

= 5V, V

SENSE

(Note 4

) = 100mV (unless otherwise specified)

Symbol

Parameter

Conditions

T

A

Min

(Note 5)

Typ.

Max

(Note 5)

Units

I

CC

V

CC

Supply Current

V

CC

= 12V,

V

SENSE

=0V

(Note 4

)

25°C 40

80

120

µA

Full range

145

I

S+

S+ Input Current

V

SENSE

= 0V

(Note 4

)

25°C 15

27

42

µA

Full range

60

I

S-

S- Input Current

25°C

15

40

80

nA

V

O(0)

Zero V

SENSE

error

(Note 4, 6

)

25°C 0

35

mV

V

O(10)

Output Offset Voltage

(Note 7

)

V

SENSE

= 10mV

(Note 4

)

25°C -25 +25

mV

Full range

-55

+55

Gain

ΔV

OUT

/

ΔV

SENSE

(Note 4)

V

SENSE

= 10mV to 150mV

(Note 4

)

25°C 9.9

10

10.1

V/V

Full range

9.8

10.2

V

OUT

TC

(Note 8

)

V

OUT

variation with

temperature

30

ppm/°C

A

CC

Total output error

-3

3

%

I

OH

Output Source Current

ΔV

OUT

= -30mV

1

mA

I

OL

Output Sink Current

ΔV

OUT

= +30mV

20

µA

PSRR

V

CC

Supply Rejection

Ration

V

CC

= 4.5V to 12V

54

60

dB

CMRR

Common-Mode Sense
Rejection Ratio

V

IN

= 60V to 3V

68

80

dB

BW

-3dB small signal
bandwidth

V

SENSE

(AC)

= 10mVpp

(Note 4

)

500

kHz

Notes: 4.

V

SENSE

= "V

S+

" - "V

S-

"

5. All Min and Max specifications over full temperature range are guaranteed by design and characterization

6. The ZXCT1080 operates from a positive power rail and the internal voltage-current converter current flow is unidirectional; these result in the output

offset voltage for V

SENSE

= 0V always being positive.

7. For V

SENSE

> 10mV, the internal voltage-current converter is fully linear. This enables a true offset to be defined and used. V

O(10)

is expressed

as the variance about an output voltage of 100mV>

8. Temperature dependent measurements are extracted from characterization and simulation results.


















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