Diodes ZSM560 - Manual (Page 2)

Issue
4 - July 2006
www.zetex.com
© Zetex Semiconductors plc 2006
TEST CONDITIONS
(T
amb
=25°C for typical values, T
amb
=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER SYMBOL MIN TYP. MAX. UNITS
Threshold Voltage
High state output (Vcc increasing)
V
IH
4.5 4.61 4.7 V
Threshold Voltage
Low state output (Vcc decreasing)
V
IL
4.5 4.59 4.7 V
Hysteresis V
H
0.01 0.02 0.05 V
OUPUT
Output sink saturation: V
OL
(V
cc
=4.0V, I
sink
=8.0mA) 0.46 1.0 V
(V
cc
=4.0V, I
sink
=2.0mA) 0.15 0.4 V
(V
cc
=1.0V, I
sink
=0.1mA) 0.25 V
Onstate output sink current
(V
cc
, Output=4V)
I
sink
10 20 60 mA
Offstate output leakage current
(V
cc
, Output=5V)
I
oh
0.02 0.5 µA
Clamp diode forward voltage
(I
f
=10mA)
V
f
0.6 1.2 1.5 V
Propagation delay
(V
in
5V to 4V, R
l
=10k, T
amb
=25°C)
T
d
1.5 µs
TOTAL DEVICE
Operating input voltage range V
cc
1.0 to 6.5 V
Quiescent input current (V
cc
=5V) I
q
135 200 µA
Note:
1. Maximum package power dissipation must be observed.
2. Maximum power dissipation for the SOT223 package is calculated assuming that the device
is mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
close to ambient as possible.
ZSM560
ABSOLUTE MAXIMUM RATING
Input Supply Voltage -1 to 10V
Offstate Output Voltage 10V
Onstate Output
Sink Current(
Note 1 ) Internally limited
Clamp Diode
Forward Current(
Note 1 ) 100mA
Operating Junction
Temperature
150°C
Operating Temperature -40 to 85°C
Storage Temperature -55 to 150°C
Power Dissipation
TO92
780mW
SOT223 2W( Note 2 )
4-360