Diodes DCX69/-16/-25 - Manual (Page 2)

DCX69/-16/-25
Document number: DS31264 Rev. 6 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
DCX69/-16/-25
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
-25 V
Collector-Emitter Voltage V
CEO
-20 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current I C
-1.0 A
Peak Pulse Power I
CM
-2.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ T
A
= 25°C P
D
1 W
Thermal Resistance, Junction to Ambient Air @ T
A
= 25°C (Note 4) R θJA 125 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V (BR)CBO
-25 ⎯ ⎯ V I C = -100
μA, I
E = 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-20 ⎯ ⎯ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5.0 ⎯ ⎯ V I
E
= -100 μA, I
C
= 0
Collector-Base Cutoff Current I CBO
⎯ ⎯
-100
-10
nA
μA
V CB = -25V, I E = 0
V
CB
= -25V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current I
EBO
⎯ ⎯ -100 nA V
EB
= -5.0V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
DCX69, DCX69-16, DCX69-25
h
FE
50
60 ⎯
⎯ ⎯
⎯ ⎯
⎯ V
CE
= -10V, I
C
= -5.0mA
V
CE
= -1.0V, I
C
= -1.0A
DCX69 85 ⎯ 375 ⎯ V
CE
= -1.0V, I
C
= -500mA
DCX69-16 100 ⎯ 250 ⎯ V
CE = -1.0V, I C = -500mA
DCX69-25 160 ⎯ 375 ⎯ V
CE
= -1.0V, I
C
= -500mA
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ ⎯ -0.5 V I
C
= -1.0A, I
B
= -100mA
Base-Emitter Turn-On Voltage V BE(ON)
⎯
⎯
⎯
-0.7
-1.0
V
V CE
= -10V, I
C
= -5mA
V CE = -1.0V, I C = -500mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product f T
40 200 ⎯ MHz
V
CE
= -5.0V, I
C
= -50mA,
f = 100MHz
Output Capacitance C
obo
⎯ 17 ⎯ pF V
CB
= -10V, f = 1MHz
Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.