Diodes 2DB1182Q - Manual (Page 2)

2DB1182Q
Document number: DS35651 Rev. 1 - 2
2 of 5
www.diodes.com
November 2011
© Diodes Incorporated
2DB1182Q
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
-40 V
Collector-Emitter Voltage V
CEO
-32 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I C
-2 A
Peak Pulse Collector Current I
CM
-3 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation P
D
10 W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
BV
CBO
-40 ⎯ ⎯ V I
C
= -50 μA, I
E
= 0
Collector-Emitter Breakdown Voltage BV
CEO
-32 ⎯ ⎯ V I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
-5
⎯ ⎯
V I
E
= -50
μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ ⎯ -1 μA V
CB
= -20V, I
E
= 0
Emitter Cutoff Current I EBO
⎯ ⎯ -1 μA
V EB = - 4V, I C = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V CE(sat)
⎯ ⎯ -0.8 V I
C
= -2A, I
B
= -0.2A
DC Current Gain h
FE
120 ⎯ 270 ⎯
V
CE
= -3V, I
C
= -0.5A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product f
T
⎯ 110 ⎯ MHz
V CE = -5V, I C = -0.1A,
f = 30MHz
Output Capacitance C
obo
⎯ 26 ⎯ pF V
CB
= -10V, f = 1MHz
Notes: 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%.
0
200
400
600
800
1,000
0.1 1 10
Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-I
,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(mA
)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
0
50
100
150
200
250
300
350
400
0.001 0.01 0.1 1 10
Fig. 2 Typical DC Current Gain vs. Collector Current
-I , COLLECTOR CURRENT (A)
C
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
V = -3V
CE