Diodes 2DB1182Q User Manual
Page 3
2DB1182Q
Document number: DS35651 Rev. 1 - 2
3 of 5
November 2011
© Diodes Incorporated
2DB1182Q
0
0.1
0.2
0.3
0.4
0.001
0.01
0.1
1
10
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-I , COLLECTOR CURRENT (A)
C
-V
,
C
O
LLE
C
T
O
R
-E
MI
T
T
E
R
SA
TU
RA
T
IO
N
VO
L
T
A
G
E (
V)
CE
(S
A
T
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
I /I = 10
C B
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
-I , COLLECTOR CURRENT (A)
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
C
-V
, BASE
-EM
IT
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (
V
)
BE
(O
N
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= -3V
CE
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
-I , COLLECTOR CURRENT (A)
C
-V
, B
ASE-
E
M
IT
T
E
R
SA
T
U
R
A
T
IO
N V
O
L
T
A
G
E (
V
)
BE
(S
A
T
)
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
I /I = 10
C B
10
100
1,000
0.1
1
10
100
Fig. 6 Typical Capacitance Characteristics
V , REVERSE VOLTAGE (V)
R
CAP
A
C
IT
A
NCE (
p
F
)
C
ibo
C
obo
f = 1MHz
0
20
40
60
80
100
120
140
0
10
20
30
40
50
60
70
80
90 100
I , COLLECTOR CURRENT (mA)
C
f
, GA
IN-B
A
NDW
ID
T
H
P
R
O
D
U
C
T
(MHz
)
T
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
V
= -5V
CE
f = 30MHz