Diodes DCX (LO-R1) H - Manual (Page 2)

DS30429 Rev. 3 - 2
2 of 4
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DCX (LO-R1) H
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UC
T
Maximum Ratings PNP Section
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage V
CC
-50 V
Input Voltage DCX122LH
DCX142JH
V
IN
+5 to -6
+5 to -6
V
Input Voltage DCX122TH
DCX142TH
V
EBO (MAX)
-5 V
Output Current All I
C
-100 mA
Power Dissipation (Note 1, 2) P
d
150 mW
Thermal Resistance, Junction to Ambient Air (Note 1) R
θJA
833 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Electrical Characteristics NPN Section
@T
A
= 25°C unless otherwise specified
R1, R2 Types
Characteristic Symbol Min Typ Max Unit Test Condition
DCX122LH
DCX142JH
V
l(off)
0.3
0.3
⎯ ⎯ V V
CC
= 5V, I
O
= 100 μA
Input Voltage
DCX122LH
DCX142JH
V
l(on)
⎯ ⎯
2.0
2.0
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
Output Voltage V
O(on)
⎯ ⎯ 0.3V V I
O
/I
l
= 5mA/0.25mA
Input Current
DCX122LH
DCX142JH
I
l
⎯ ⎯
28
13
mA V
I
= 5V
Output Current I
O(off)
⎯ ⎯ 0.5 μA V
CC
= 50V, V
I
= 0V
DC Current Gain
DDCX122LH
DDCX142JH
G
l
56
56
⎯ ⎯ ⎯ V
O
= 5V, I
O
= 10mA
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section
@T
A
= 25°C unless otherwise specified
R1-Only
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 ⎯ ⎯ V I
C
= 50 μA
Collector-Emitter Breakdown Voltage BV
CEO
40 ⎯ ⎯ V I
C
= 1mA
Emitter-Base Breakdown Voltage DCX122TH
DCX142TH
BV
EBO
5 ⎯ ⎯ V
I
E
= 50 μA
I
E
= 50 μA
Collector Cutoff Current I
CBO
⎯ ⎯ 0.5 μA V
CB
= 50V
Emitter Cutoff Current
DCX122TH
DCX142TH
I
EBO
⎯
⎯
⎯
0.5
0.5
μA V
EB
= 4V
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ 0.3 V I
C
= 5mA, I
B
= 0.25mA
DC Current Transfer Ratio
DCX122TH
DCX142TH
h
FE
100
100 250
250 600
600
⎯ I
C
= 1mA, V
CE
= 5V
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only