Diodes 2N7002E - Manual (Page 2)

2N7002E
Document number: DS30376 Rev. 14 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
2N7002E
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage R
GS
 1.0M
V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
250
200
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
300
240
mA
Maximum Body Diode Forward Current (Note 6) I
S
500 mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
800 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
370
mW
(Note 6) 540
Thermal Resistance, Junction to Ambient
(Note 5)
R θJA
348
°C/W (Note 6) 241
Thermal Resistance, Junction to Case (Note 6) R θJC 91
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV
DSS
60 70  V V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
 
1.0
500
µA V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage I
GSS
  ±10 nA V
GS
= ±15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS(th)
1.0  2.5 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
R
DS (ON)

 1.6
2.0 3
4
Ω
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 200mA
On-State Drain Current I
D(ON)
0.8 1.0  A V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance g
FS
80   mS V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C
iss
 22 50 pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance C
oss
 11 25 pF
Reverse Transfer Capacitance C
rss
 2.0 5.0 pF
Gate resistance R
g
 120  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V GS = 4.5V) Q g
 223  pC
V DS = 10V, I D = 250mA Gate-Source Charge Q
gs
 82  pC
Gate-Drain Charge Q
gd
 178  pC
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time t
D(ON)
 7.0 20 ns V
DD
= 30V, I
D
= 0.2A,
R
L
= 150 Ω, V
GEN
= 10V, R
GEN
= 25 Ω Turn-Off Delay Time t
D(OFF)
 11 20 ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.