Diodes 2N7002E - Manual (Page 3)

2N7002E
Document number: DS30376 Rev. 14 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
2N7002E
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
I,
D
R
AI
N-
S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 2 Drain Current vs. Gate-Source Voltage
GS
0.4
0.8
1.2
1.6
2.0
0 1 2 3 4 5 6 7
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = -55°C
A
T = 125°C
A
T = 25°C
A
0
1
2
3
4
5
0 2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
Fig. 3 On Resistance vs. Gate-Source Voltage
GS
I = 75mA
D
I = 250mA
D
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
DS
(O
N)

0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
Fig. 4 On Resistance vs. Drain Current
D
V = 4.5V
GS
V = 10V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N)

0
T , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
J
1
2
3
4
5
-75 -50 -25 0 25 50 75 100 125 150
V = 10V @ 250mA
GS
V = 4.5V @ 200mA
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N)

0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0