Diodes BS870 - Manual (Page 2)

BS870
Document number: DS11302 Rev. 18 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BS870
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage R
GS
 1.0M V
DGR
60 V
Gate-Source Voltage Continuous V GSS
20 V
Drain Current (Note 6) Continuous I
D
250 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) P
D
300 mW
Thermal Resistance, Junction to Ambient R  JA
417 C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
60 80  V V GS = 0V, I D = 100
A
Zero Gate Voltage Drain Current I
DSS
  0.5 µA V
DS
= 25V, V
GS
= 0V
Gate-Body Leakage I
GSS
  10 nA V
GS
= 15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 2.0 3.0 V V
DS
= V
GS
, I
D
= 250
A
Static Drain-Source On-Resistance R
DS (ON)
 3.5 5.0  V
GS
= 10V, I
D
= 0.2A
On-State Drain Current I D(ON)
0.5 1.0  A V GS = 10V, V DS = 7.5V
Forward Transconductance g
FS
80   mS V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
 22 50 pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 11 25 pF
Reverse Transfer Capacitance C
rss
 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
 2.0 20 ns V
ES
= 10V, R
L
= 150
,
V
DS
= 10V, R
D
= 100

Turn-Off Delay Time t D(OFF)
 5.0 20 ns
Notes: 6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on
our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.