Diodes BS870 - Manual (Page 3)

BS870
Document number: DS11302 Rev. 18 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BS870
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I
DRAI
N-
S
O
URCE CURRENT
(
A
)
D
,
0
1
2
3
4
5
0 0.2
R
, N
O
R
MA
L
IZ
E
D
DRAI
N
-SO
U
RCE O
N
-R
ESI
S
T
A
N
CE
DS
(O
N
)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R
, N
O
R
MA
L
IZ
E
D
D
RAIN-
S
O
U
RCE ON-
RE
S
IST
A
NC
E
DS
(O
N
)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18
R
, NORM
AL
IZ
ED
D
RAIN-
SOURCE ON-
R
ESIS
T
A
NCE
DS
(O
N)
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 5 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400