New prod uc t, Electrical characteristics, Q2, bss84 p-channel mosfet element – Diodes CTA2N1P User Manual
Page 2
DS30295 Rev. 7 - 2
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CTA2N1P
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NEW PROD
UC
T
Electrical Characteristics
, Q1, MMBT4401 NPN Transistor Element
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
100
nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
Base Cutoff Current
I
BL
⎯
100
nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.75
⎯
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
⎯
6.5
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
⎯
30
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
15
k
Ω
Voltage Feedback Ratio
h
re
0.1
8.0
x 10
-4
Small Signal Current Gain
h
fe
40
500
⎯
Output Admittance
h
oe
1.0
30
μS
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
15
ns
Rise Time
t
r
⎯
20
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
Storage Time
t
s
⎯
225
ns
Fall Time
t
f
⎯
30
ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Electrical Characteristics
, Q2, BSS84 P-Channel MOSFET Element
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-50
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
⎯
⎯
⎯
⎯
-15
-60
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= 25
°C
V
DS
= -50V, V
GS
= 0V, T
J
= 125
°C
V
DS
= -25V, V
GS
= 0V, T
J
= 25
°C
Gate-Body Leakage
I
GSS
⎯
⎯
±10
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.8
⎯
-2.0
V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
10
Ω V
GS
= -5V, I
D
= 0.100A
Forward Transconductance
g
FS
.05
⎯
⎯
S
V
DS
= -25V, I
D
= 0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
45
pF
Output Capacitance
C
oss
⎯
⎯
25
pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
12
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
⎯
10
⎯
ns
Turn-Off Delay Time
t
D(OFF)
⎯
18
⎯
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50
Ω, V
GS
= -10V
Notes: 5. Short duration pulse test used to minimize self-heating effect.