Diodes CTA2N1P - Manual (Page 3)

DS30295 Rev. 7 - 2 3 of 6
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CTA2N1P
© Diodes Incorporated
MMBT4401 Section
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs.
Ambient Temperature (Total Device)
A
150
200
0
1
10
1,000
100
0.1 1 10 1,000 100
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
NEW PROD
UC
T
1.0
5.0
20
10
30
0.1 10 1.0 50
C
A
P
A
C
IT
AN
C
E (
p
F
)
REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance
C
obo
C
ibo
0.001 0.01 1 10 0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
B
V,
C
O
LL
E
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (
V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C