Ap6015, Electrical characteristics – Diodes AP6015 User Manual

Page 5

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AP6015

High Efficiency Step-Down Low Power DC-DC Converter

AP6015 Rev. 3

5 of 18

FEBRUARY 2009

www.diodes.com

©

Diodes Incorporated

Electrical Characteristics

(Continued)


Over recommended operating free-air temperature range, V

I

=3.6V, V

O

=2.5V, I

O

=300 mA, EN=V

IN

. (unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ.

Max

Unit

Power switch and current limit

R

DS(on)

P-channel MOSFET on-resistance

V

I

=V

GS

=3.6V;

I=200mA

200 280 410

m

V

I

=V

GS

=2V;

I=200mA

- 480 -

P-channel leakage current

V

DS

=5.5V

- - 1

μA

N-channel MOSFET on-resistance

V

I

=V

GS

=3.6V; I

O

=200mA

200 280 410

m

V

I

=V

GS

=2V; I

O

=200mA

-

500 -

N-channel leakage current

V

DS

=5.5V -

-

1

μA

I

(LIM)

P-channel

current

limit

2.5V

≤V

I

≤5.5V 1200

-

1600

mA

Power good output (see Note 5)

V

(PG)

Power good threshold

Feedback voltage falling

88%

V

O

92%

V

O

94%

V

O

V

Power good hysteresis

2.5% V

O

V

OL

PG output low voltage

V

(FB)

=0.8×V

O

nominal;

I

(sink)

=10

μA

- -

0.3 V

I

LKG

PG output leakage current

V

(FB)

=V

O

nominal

0.01

1

μA

Minimum supply voltage for valid
power good signal

1.2

-

-

V

Oscillator

F

S

Oscillator

frequency

800

1000

1200

KHz

Output

V

O

Adjustable output voltage range

0.8

5.5

V

V

REF

Reference

voltage

0.784 0.8 0.816

V

V

O

Fixed output
voltage
(see Note 6)

AP6015-Adj

V

I

=2.5V to 5.5V;

0mA

≤ I

O

≤ 800mA

-3%

- 4%

V

AP6015-1.8V

10mA

≤ I

O

≤ 800mA

-3%

- 3%

AP6015-2.5V

V

I

=2.7V to 5.5V;

0mA

≤ I

O

≤ 800mA

-3%

- 4%

10mA

≤ I

O

≤ 800mA

-3%

- 3%

AP6015-3.3V

V

I

=3.6V to 5.5V;

0mA

≤ I

O

≤ 800mA

-3%

- 4%

10mA

≤ I

O

≤ 800mA

-3%

- 3%

Line regulation

V

I

= V

O

+0.5V (min.2V)

to 6.0V; I

O

=10mA

0.3 %/V

Load regulation

V

I

=5.0V;

I

O

=10mA to 800mA

0.8 %

η Efficiency

V

I

=5V; V

O

=3.3V; I

O

=300mA

94 %

V

I

=3.6V; V

O

=2.5V; I

O

=200mA

Start-up time

I

O

=0mA, time from

active EN to V

O

0.4 1 4 ms

θ

JA

Thermal Resistance
Junction-to-Ambient

MSOP-10L (Note 7)

161

o

C/W

θ

JC

Thermal Resistance

Junction-to-Case

MSOP-10L (Note 7)

39

o

C/W

Notes: 5. Power good is not valid for the first 100

μs after EN goes high. Please refer to the application section for more information.

6. The output voltage accuracy includes line and load regulation over the full temperature range.
7. Test condition for MSOP-10L: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,

double sided FR-4 PCB

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