Diodes AP2192 - Manual (Page 4)

AP2182/ AP2192
Document number: DS31569 Rev. 7 - 2
4 of 17
www.diodes.com
April 2013
© Diodes Incorporated
AP2182/ AP2192
Electrical Characteristics
(@T
A
= +25°C, V
IN
= +5V, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Unit
V
UVLO
Input UVLO R
LOAD
= 1k Ω 1.6 1.9 2.5 V
I
SHDN
Input Shutdown Current Disabled, I
OUT
= 0 0.5 1 µA
I
Q
Input Quiescent Current, Dual Enabled, I
OUT
= 0 100 160 µA
I LEAK
Input Leakage Current Disabled, OUT grounded 1 µA
I
REV
Reverse Leakage Current Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
1 µA
R
DS(ON)
Switch on-resistance
V
IN
= 5V,
I OUT = 0.5A,
MSOP-8EP, -40°C ≤ T
A
≤ +85°C 115 150 m Ω
SO-8, -40°C ≤ T
A
≤ +85°C 120 160 m Ω
V
IN
= 3.3V, I
OUT
= 0.5A, -40°C ≤ T
A
≤ 85°C 140 180 m Ω
I
SHORT
Short-circuit current limit Enabled into short circuit, C
L
= 68µF 2.0 A
I
LIMIT
Over-Load Current Limit V
IN
= 5V, V
OUT
= 4.5V, C
L
= 68µF, -40°C ≤ T
A
≤ +85°C 1.6 2.1 2.6 A
I Trig
Current limiting trigger threshold V IN = V EN , Output Current Slew rate (<100A/WS), C L = 68µF 3.0 A
V
IL
EN Input Logic Low Voltage V
IN
= 2.7V to 5.5V 0.8 V
V
IH
EN Input Logic High Voltage V
IN
= 2.7V to 5.5V 2 V
I
SINK
EN Input leakage V
EN
= 5V 1 µA
T
D(ON)
Output turn-on delay time C
L
=1µF, R
LOAD
= 10 Ω 0.05 ms
T
R
Output turn-on rise time C
L
=1µF, R
LOAD
= 10 Ω 0.6 1.5 ms
T
D(OFF)
Output turn-off delay time C
L
=1µF, R
LOAD
= 10 Ω 0.01 ms
T F
Output turn-off fall time C L =1µF, R LOAD = 10 Ω 0.05 0.1 ms
R
FLG
FLG output FET on-resistance I
FLG
=10mA 30 50 Ω
T
Blank
FLG blanking time C
IN
=10µF, C
L
= 68µF 4 7 15 ms
T
SHDN
Thermal shutdown threshold Enabled, R
LOAD
= 1k Ω 140 C
T
HYS
Thermal shutdown hysteresis 25
C
θ
JA
Thermal Resistance Junction-to-Ambient
SO-8 (Note 5) 110 o C/W
MSOP-8EP (Note 6) 60 o C/W
Notes: 5. Test condition for SO-8: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad layout.
6. Test condition for MSOP-8EP: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
layer ground plane.