Diodes AP7175 - Manual (Page 3)

AP7175
Document number: DS35606 Rev. 3 - 2
3 of 14
www.diodes.com
December 2012
© Diodes Incorporated
NEW PROD
UC
T
AP7175
Absolute Maximum Ratings
(Note 4) (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Rating Unit
V
IN
V
IN
Supply Voltage (V
IN
to GND) -0.3 to +4.0 V
V
CNTL
V
CNTL
Supply Voltage (V
CNTL
to GND) -0.3 to +7.0 V
V
OUT
V
OUT
to GND Voltage -0.3 to V
IN
+0.3 V
PG to GND Voltage -0.3 to +7.0 V
EN, FB to GND Voltage -0.3 to V
CNTL
+0.3 V
P
D
Power Dissipation (SO-8EP) 1.7 W
Power Dissipation (MSOP-8EP) 1.5
T
J
Maximum Junction Temperature 150 °C
T
STG
Storage Temperature -65 to +150 °C
T
SDR
Maximum Lead Soldering Temperature, 10 Seconds 260 °C
Note: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V CNTL V CNTL Supply Voltage 3.0 5.5 V
V
IN
V
IN
Supply Voltage 1.2 3.65 V
V
OUT
V
OUT
Output Voltage (when V
CNTL
-V
OUT
>1.9V) 0.8 V
IN
- V
DROP
V
I
OUT
V
OUT
Output Current
Continuous Current 0 3
A
Peak Current 0 4
C
OUT
V
OUT
Output Capacitance
I
OUT
= 3A at 25% nominal V
OUT
8 1100
µF I
OUT
= 2A at 25% nominal V
OUT
8 1700
I
OUT
= 1A at 25% nominal V
OUT
8 2400
E SRCOUT ESR of V OUT Output Capacitor 0 200 m Ω
T A
Ambient Temperature -40 +85 °C
T
J
Junction Temperature -40 +125 °C