High voltage hall effect latch ah278, Data sheet – Diodes AH278 User Manual

Page 4

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HIGH VOLTAGE HALL EFFECT LATCH AH278

4

Nov. 2009 Rev. 1. 4

BCD Semiconductor Manufacturing Limited

Data Sheet

Parameter Symbol

Value

Unit

Supply Voltage

V

CC

30

V

Reverse Protection Voltage

V

RCC

-30 V

Magnetic Flux Density

B

Unlimited

Gauss

Output Current

Continuous

I

O

500 (Note 2)

mA

Hold

600

mA

Peak (start up)

800

mA

Power Dissipation

P

D

550

mW

Thermal Resistance

Die to atmosphere

θJA

227

o

C/W

Die to package case

θJC

49

o

C/W

Storage Temperature

T

STG

-50 to 150

o

C

ESD (Machine Model)

300

V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Note 2: Continuos output current is 300mA at 85

o

C.

Parameter

Symbol

Min

Max

Unit

Supply Voltage

V

CC

4

28

V

Operating Ambient Temperature

T

A

-20

85

o

C

Recommended Operating Conditions

Absolute Maximum Ratings (Note 1)

(T

A

=25

o

C)

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