Data sheet high voltage hall effect latch ah278, Electrical characteristics, Magnetic characteristics – Diodes AH278 User Manual
Page 5
5
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH AH278
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Low Supply Voltage
V
CE
V
CC
=5V, I
O
=100mA
0.1
0.3
V
Output Saturation Voltage
V
SAT
1
I
O
=500mA
0.5
0.8
V
Output Saturation Voltage
V
SAT
2
I
O
=300mA
0.25
0.5
V
Output Leakage Current
I
OL
V
DO
,V
DOB
=24V
0.1
10
µA
Supply Current
I
CC
V
CC
=24V, Output Open
12.5
16
mA
Output Rise Time
tr
R
L
=820
Ω, C
L
=20pF
3.0
10
µs
Output Fall Time
tf
R
L
=820
Ω, C
L
=20pF
0.3
1.5
µs
Switch Time Differential
∆t
R
L
=820
Ω, C
L
=20pF
3.0
10
µs
Output Zener Breakdown Voltage
V
ZO
60
V
(T
A
=25
o
C, V
CC
=24V, unless otherwise specified)
Electrical Characteristics
Parameter
Symbol
Grade
Min
Typ
Max
Unit
Operating Point
B
OP
A
10
70
Gauss
B
100
Gauss
Releasing Point
B
RP
A
-70
-10
Gauss
B
-100
Gauss
Hysteresis
B
HYS
80
Gauss
Magnetic Characteristics
(T
A
=25
o
C)
V
DO
(V)
High
Low
B
HYS
V
SAT
0
S
N
B
RP
B
OP
Off-state
On-state
Turn off
Turn on
Magnetic Flux Density (Gauss)