Diodes APX4558 - Manual (Page 3)

APX4558
DUAL CHANNEL LOW NOISE GENERAL PURPOSE
OPERATIONAL AMPLIFIER
APX4558
Document number: DS35022 Rev. 4 - 2
3 of 10
www.diodes.com
January 2011
© Diodes Incorporated
NEW PROD
UC
T
Electrical Characteristics (V
CC±
= ±15V, T
A
= 25C, unless otherwise stated)
Symbol Parameter Conditions T
A
Min Typ. Max Unit
AC Characteristics
V
IO
Input offset voltage V
O
= 0V
25°C 0.5 6
mV
Full temp 7.5
I
IO
Input offset current V
O
= 0V
25°C 5 200
nA
Full temp 300
I
IB
Input bias current V
O
= 0V
25°C 150 500
nA
Full temp 800
V
ICR
Common-mode input voltage
range
25°C ±12 ±14 V
V
OM
Maximum output voltage swing
R
L
= 10k
Ω 25°C
±12 ±14
V
R
L
= 2k
Ω
25°C ±10 ±13
Full temp ±10
A
VD
Large-signal differential voltage
amplification R
L
≥ 2k Ω
V
O
= ±10V
25°C 20 300
V/mV
Full temp 15
R
IN
Input resistance 25°C 0.3 5 M
Ω
CMRR Common-mode rejection ratio V
IN
= V
ICR(Min)
25°C 70 90 dB
PSRR Power supply rejection ratio V
CC±
= ±15V to ±9V 25°C 76 90 dB
I
CC
Supply current both amplifiers V
O
= 0V, No load
25°C 2.5 5.6
mA T
A
min 3 6.6
T
A
max 2.3 5
AC Characteristics
B
1
Unity-gain bandwidth 25°C 3 MHz
SR Slew rate at unity gain
V
I
= ±10V, R
L
= 2k
Ω,
C
L
= 100pF
25°C 1.1 1.7 V/µs
v
n
Equivalent input noise voltage
(closed loop) G=100, R
S
= 100
Ω
F = 1kHz, BW = 1Hz
25°C 8 nV/ Hz
V
O1
/V
O2
Crosstalk attenuation
Open loop R
S
= 1k
Ω
f = 10kHz
25°C
85
dB
G = 100 105
t
r
Rise time
overshoot
V
I
= 20mV, R
L
= 2k
Ω,
C
L
= 100pF
25°C 0.13 µs
25°C 5 %
Power and Thermal Characteristics
P
D
Total power dissipation both
amplifiers
V
O
= 0V, No load
25°C 75 170
mW T
A
min 90 200
T
A
max 70 150
θ
JA
Thermal Resistance Junction-to-
Ambient
SO-8 (Note 8) 130 °C/W
θ
JC
Thermal Resistance Junction-to-
Case
SO-8 Note 8) 15 °C/W
Notes: 8. Test condition for SO-8: Device mounted on FR-4 substrate PC board, with minimum recommended pad layout
9. Full temp is specified as 0 to 70°C for the APX4558 and -40 to 105°C for the APX48558I