Diodes B170_B - B1100_B - Manual (Page 2)

B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
2 of 4
www.diodes.com
September 2010
© Diodes Incorporated
B170/B - B1100/B
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol B170/B B180/B B190/B B1100/B Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V R
70 80 90 100 V
RMS Reverse Voltage V
R(RMS)
49 56 63 70 V
Average Rectified Output Current @ T
T
= 125 °C I
O
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
30 A
Repetitive Peak Reverse Current I
RRM
1.0 A
Thermal Characteristics
Characteristic Symbol B170/B B180/B B190/B B1100/B Unit
Typical Thermal Resistance Junction to Terminal (Note 4) R θJT 25 °C/W
Operating and Storage Temperature Range T J, T STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V F
- -
0.79
0.69
V
I
F
= 1.0A, T
A
= 25 °C
I F = 1.0A, T A = 100
°C
Leakage Current (Note 5) I
R
-
- -
- 0.5
5.0
mA
@ Rated V
R
, T
A
= 25
°C
@ Rated V
R
, T
A
= 100
°C
Total Capacitance C
T
- - 80 pF V
R
= 4V, f = 1MHz
Notes: 4. Valid provided that terminals are kept at ambient temperature.
5. Short duration pulse test used to minimize self-heating effect.
0.01
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0
I
, INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
F
T = 25°C
I Pulse Width = 300µs
J
F
10
100
1,000
0.1 1 10 100
C
,
T
O
T
AL
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
V , DC REVERSE VOLTAGE (V)
Fig. 2 Total Capacitance vs. Reverse Voltage
R