Fcx688b, Electrical characteristics (at t, 25°c) – Diodes FCX688B User Manual
Page 2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
Min
Typ
Max
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
12
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
12
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
µ
A
Collector Cut-Off Current
I
CBO
0.1
µ
A
V
CB
=9V
Emitter Cut-Off Current
I
EBO
0.1
µ
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
40
60
180
350
400
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=1mA *
I
C
=0.1A, I
B
=0.5mA *
I
C
=1A, I
B
=10mA *
I
C
=3A, I
B
=10mA *
I
C
=4A, I
B
=50mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=3A, I
B
=20mA *
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
IC=3A, V
CE
=2V *
Static Forward Current
Transfer
Ratio
h
FE
500
400
100
I
C
=100mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
40
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
40
500
ns
ns
I
C
=500mA, I
B1
=I
B2
=50mA
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
FCX688B