Fzt717, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes FZT717 SOT223 User Manual
Page 4
FZT717
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
-12
V
I
C
= 100µA
Collector-emitter breakdown
voltage
BV
CEO
-12
V
I
C
= 10mA
Emitter-base breakdown
voltage
BV
EBO
-5
V
I
E
= 100µA
Collector cut-off current
I
CBO
-100
nA
V
CB
= -10V
Emitter cut-off current
I
EBO
-100
nA
V
EB
= -4V
Collector-emitter saturation
voltage
V
CE(sat)
-20
mV
I
C
=-0.1A, I
B
=-10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
Յ2%
-150
I
C
=-1A, I
B
=-10mA
-320
I
C
=-3A, I
B
=-50mA
Base-emitter saturation
voltage
V
BE(sat)
-1050
mV
I
C
=-3A, I
B
=-50mA
Base-emitter turn-on voltage
V
BE(on)
-1000
mV
I
C
=-3A, V
CE
=-2V
Static forward current transfer
ratio
h
FE
300
I
C
=-10mA, V
CE
=-2V
300
I
C
=-100mA, V
CE
160
I
C
=-3A, V
CE
=-2V
60
I
C
=-8A, V
CE
=-2V
45
I
C
=-10A, V
CE
=-2V
Transition frequency
f
T
80
110
MHz
I
C
=-50mA, V
CE
=-10V
f = 100MHz
Output capacitance
C
OBO
21
30
pF
V
CB
=-10V, f = 1MHz
Switching times
t
on
70
ns
V
CC
=-6V, I
C
=-2A
t
off
130
ns
I
B1
= I
B2
=50mA