Electrical characteristics, Fzt789a, A product line of diodes incorporated – Diodes FZT789A User Manual
Page 4
FZT789A
Document Number DS33168 Rev. 5 - 2
4 of 7
January 2013
© Diodes Incorporated
FZT789A
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-30 -40
−
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
-25 -35
−
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.5
−
V
I
E
= -100µA
Collector Cut-off Current
I
CBO
−
<1 -100 nA V
CB
= -15V
−
−
-10 µA
V
CB
= -15V, T
amb
= 100°C
Collector Cut-off Current
I
CES
−
<1
-100 nA
V
CE
= -15V
Emitter Cut-off Current
I
EBO
−
<1 -100 nA V
EB
= -5.6V
Collector-Emitter Saturation Voltage (Note 8)
V
CE(sat)
−
-0.15 -0.25
V
I
C
= -1A, I
B
= -10mA
−
-0.30 -0.45
I
C
= -2A, I
B
= -20mA
-0.30 -0.50
I
C
= -3A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 8)
V
BE(sat)
−
-0.80 -1.0
V I
C
= -1A, I
B
= -10mA
Base-Emitter Turn-On Voltage (Note 8)
V
BE(on)
−
-0.75 -1.1
V
I
C
= -1A, V
CE
= -2V
DC Current Gain (Note 8)
h
FE
300
−
800
−
I
C
= -10mA, V
CE
= -2V
250
−
−
I
C
= -1A, V
CE
= -2V
200
−
−
I
C
= -2A, V
CE
= -2V
100
−
−
I
C
= -6A, V
CE
= -2V
Current Gain-Bandwidth Product (Note 8)
f
T
100
−
−
MHz
V
CE
= -5V, I
C
= -50mA
f = 50MHz
Turn-On Time
t
on
−
35
−
ns
V
CC
= -10V, I
C
= -500mA
I
B1
= I
B2
= -50mA
Turn-Off Time
t
off
−
400
−
ns
Input Capacitance (Note 8)
C
ibo
−
225
−
pF
V
EB
= -0.5V, f = 1MHz
Output Capacitance (Note 8)
C
obo
−
25
−
pF
V
CB
= -10V, f = 1MHz
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%