Diodes FZT949 - Manual (Page 2)

FZT948
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
-40 -55 V I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage V
(BR)CER
-40 -55 V I
C
=-1
µ
A, RB
≤
1k
Ω
Collector-Emitter
Breakdown Voltage V
(BR)CEO
-20 -30 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage V
(BR)EBO
-6 -8 V I
E
=-100
µ
A
Collector Cut-Off Current I
CBO
-50
-1 nA
µ
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
Collector Cut-Off Current I
CER
R
≤
1k
Ω
-50
-1 nA
µ
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
Emitter Cut-Off Current I
EBO
-10 nA V
EB
=-6V
Collector-Emitter Saturation
Voltage V
CE(sat)
-60
-110
-200
-360 -130
-180
-280
-450 mV
mV
mV
mV I
C
=-0.5A, I
B
=-10mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-6A, I
B
=-250mA*
Base-Emitter
Saturation Voltage V
BE(sat)
-1050 -1200 mV I
C
=-5A, I
B
=-300mA*
Base-Emitter
Turn-On Voltage V
BE(on)
-870 -1050 mV I
C
=-6A, V
CE
=-1V*
Static Forward
Current Transfer Ratio h
FE
100
100
75
60
15 200
200
160
130
40
300
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency f
T
80 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance C
obo
163 pF V
CB
=-10V, f=1MHz
Switching Times t
on
t
off
120
126 ns
ns I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
R
CE(sat)
46m
Ω
at 5A
TBA