Fzt949, Electrical characteristics (at t, 25°c) – Diodes FZT949 User Manual
Page 4
FZT949
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50
-80
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-50
-80
V
I
C
=-1
µ
A, RB
≤
1k
Ω
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
-45
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6
-8
V
I
E
=-100
µ
A
Collector Cut-Off Current
I
CBO
-50
-1
nA
µ
A
V
CB
=-40V
V
CB
=-40V,
T
amb
=100°C
Collector Cut-Off Current
I
CER
R
≤
1k
Ω
-50
-1
nA
µ
A
V
CB
=-40V
V
CB
=-40V,
T
amb
=100°C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-50
-85
-190
-350
-75
-140
-270
-440
mV
mV
mV
mV
I
C
=-0.5A, I
B
=-20mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5.5A, I
B
=-500mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1100
-1250
mV
I
C
=-5.5A, I
B
=-500mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-900
-1060
mV
I
C
=-5.5A, V
CE
=-1V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
200
200
140
35
300
I
C
=-10mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
122
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
120
130
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
R
CE(sat)
44m
Ω
at 4.5A
TBA