Electrical characteristics – q1 npn transistor, Dst847bpdp6 – Diodes DST847BPDP6 User Manual
Page 3
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
3 of 8
January 2010
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics – Q1 NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic (Note 4)
Symbol
Min
Typical
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V
(BR)CBO
50
150
- V
I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CES
50
150
- V
I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
45
65
- V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6
8.35
- V
I
E
= 1
μA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
-
-
15
nA
V
CB
= 30V
DC Current Gain
h
FE
100
200
220
300
-
470
-
I
C
= 10
μA, V
CE
= 5V
I
C
= 2.0mA, V
CE
= 5V
Collector-Emitter Saturation Voltage
V
CE(sat)
-
-
50
122
125
300
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
-
-
760
880
1000
1100
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage
V
BE(on)
580
650
725
750
800
mV
I
C
= 2.0mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
Current Gain-Bandwidth Product
f
T
100
175
- MHz
V
CE
= 5V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
cbo
-
1.5
- pF
V
CB
= 10V, f = 1.0MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect