Diodes DST847BPDP6 - Manual (Page 5)

DST847BPDP6
Document number: DS32036 Rev. 1 - 2
5 of 8
www.diodes.com
January 2010
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics – Q2 PNP Transistor
@T
A
= 25°C unless otherwise specified
Characteristic (Note 4) Symbol Min Typical Max Unit Test Condition
Collector-Base Breakdown Voltage V
(BR)CBO
-50 -100 - V I
C
= -10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage V
(BR)CES
-50 -90 - V I
C
= -10 μA, I
B
= 0
Collector-Emitter Breakdown Voltage V (BR)CEO
-45 -65 - V I C = -1mA, I B = 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-6 -8.5 - V I
E
= -1
μA, I
C
= 0
Collector Cutoff Current I CBO
- - -15 nA V
CB
= -30V
DC Current Gain h FE
100
200 340
330 -
470
-
I C = -10
μA, V
CE = -5V
I C = -2.0mA, V CE = -5V
Collector-Emitter Saturation Voltage V
CE(sat)
-
- -70
-300
-175
-500
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(sat)
-
- -760
-885 -1000
-1100
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage V
BE(on)
-600
-
-670
-715 -780
-850
mV
I
C
= -2.0mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
Current Gain-Bandwidth Product f
T
100 340 - MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Output Capacitance C
obo
- 2.0 - pF V
CB
= -10V, f = 1.0MHz
Notes: 4. Short duration pulse test used to minimize self-heating effect.