Diodes FCX1151A - Manual

SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 5A Peak Pulse Current
* Excellent H
FE
Characteristics up to 5 Amps
* Extremely Low Saturation Voltage E.g. 60mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
66m
Ω
at 3A
Complimentary Type - FCX1051A
Partmarking Detail - 151
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-45 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current ** I
CM
-5 A
Continuous Collector Current I
C
-3 A
Base Current I
B
-500 mA
Power Dissipation at T
amb
=25°C P
tot
1 †
2 ‡ W
W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1151A