Diodes FCX1151A - Manual (Page 2)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
-45 V I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage V
(BR)CES
-40 V I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage V
(BR)CEO
-40 V I
C
=-10mA
Collector-Emitter
Breakdown Voltage V
(BR)CEV
-40 V I
C
=-100
µ
A, V
EB
=+1V
Emitter-Base
Breakdown Voltage V
(BR)EBO
-5 V I
E
=-100
µ
A
Collector Cut-Off Current I
CBO
-0.3 -100 nA V
CB
=-36V
Emitter Cut-Off Current I
EBO
-0.3 -100 nA V
EB
=-4V
Collector Emitter Cut-Off
Current I
CES
-0.3 -100 nA V
CE
=-32V
Collector-Emitter
Saturation Voltage V
CE(sat)
-60
-120
-140
-200 -90
-180
-220
-300 mV
mV
mV
mV I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-5mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-3A, I
B
=-250mA*
Base-Emitter
Saturation Voltage V
BE(sat)
-985 -1050 mV I
C
=-3A, I
B
=-250mA*
Base-Emitter Turn-On
Voltage V
BE(on)
-850 -950 mV I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio h
FE
270
250
180
100 450
400
300
190
45
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
Transition Frequency f
T
145 MHz I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance C
cb
40 pF V
CB
=-10V, f=1MHz
Switching Times t
on
170 ns I
C
=-2A, I
B
=-20mA,
V
CC
=-30V
t
off
460 ns I
C
=-2A, I
B
=
±
20mA,
V
CC
=-30V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
FCX1151A