New product, Maximum ratings, Discrete pnp transistor (q1) – Diodes LBN150B01 User Manual
Page 2: Maximum ratings: discrete npn transistor (q2)
DS30749 Rev. 4 - 2
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LBN150B01
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NEW PRODUCT
Maximum Ratings:
Discrete PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-6
V
Output Current - continuous (Note 4)
I
C
-200 mA
Maximum Ratings: Discrete NPN Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Output Current - continuous (Note 4)
I
C
200 mA
Electrical Characteristics: Discrete PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max Unit
Test
Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
CBO
-40
⎯
V
I
C
= -10uA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
CEO
-40
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
EBO
-6
⎯
V
I
E
= -10
μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current
I
BL
⎯
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
Collector-Base Cut Off Current
I
CBO
⎯
-50 nA
V
CB
= -30V, I
E
= 0
Collector-Emitter Cut Off Current
I
CEO
⎯
-50 nA
V
CE
= -30V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
⎯
-50 nA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
105
⎯
⎯
V
CE
= -1V, I
C
= -100
μA
110
⎯
⎯
V
CE
= -1V, I
C
= -1 mA
120
⎯
⎯
V
CE
= -1V, I
C
= -10 mA
90
⎯
⎯
V
CE
= -1V, I
C
= -50 mA
32
⎯
⎯
V
CE
= -1V, I
C
= -100 mA
DC Current Gain
h
FE
10
⎯
⎯
V
CE
= -1V, I
C
= -200 mA
⎯
-0.08
I
C
= - 10 mA, I
B
= -1 mA
⎯
-0.15
I
C
= -50mA, I
B
= -5mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.5
V
I
C
= -200mA, I
B
= -20mA
Equivalent on-resistance
R
CE(SAT)
⎯
2.5
Ω
I
C
= -200mA, I
B
= -20mA
Base-Emitter Turn-on Voltage
V
BE(ON)
⎯
-0.92 V
V
CE
= -5V, I
C
= -200mA
⎯
-0.95
I
C
= -10mA, I
B
= -1mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-1.1
V
I
C
= -50mA, I
B
= -5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
OBO
⎯
4 pF
V
CB
= -5.0 V, f = 1.0 MHz, I
E
= 0
Input Capacitance
C
IBO
⎯
8 pF
V
EB
= -5.0 V, f = 1.0 MHz, I
C
= 0
Input Impedance
h
IE
2 12 K
Ω
Voltage Feedback ratio
h
RE
0.1 10
x
10E-4
Small Signal Current Gain
h
FE
100 400
⎯
Output Admittance
h
OE
3 60
μS
V
CE
= 1.0V, Ic = 10mA, f = 1.0 KHz
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= - 20V, I
C
= -10mA, f = 100 MHz
Noise Figure
NF
⎯
4 dB
V
CE
= - 5V, Ic = -100 uA, R
s
= 1
Ω,
f =1 KHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
35 ns
V
CC
= -3.0 V, I
C
= -10 mA,
Rise Time
t
r
⎯
35 ns
V
BE(OFF)
= 0.5V, I
B1
= -1.0 mA
Storage Time
t
s
⎯
225 ns
V
CC
= -3.0 V, I
C
= -10 mA,
Fall Time
t
f
⎯
75 ns
I
B1
= I
B2
= -1.0 mA
Notes:
4. Short duration pulse test used to minimize self-heating effect.