Characteristics of pnp transistor (q1), New product – Diodes LBN150B01 User Manual
Page 5
Characteristics of PNP Transistor (Q1):
0
50
200
100
150
0
2
4
6
8
I,
1
100
1,000
10
1
10
100
1,000
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
,
I , COLLECTOR CURRENT (mA)
Fig. 9 Typical DC Current Gain vs. Collector Current
C
T = 125 C
A
°
T = -55 C
A
°
T = 85 C
A
°
T = 150 C
A
°
T = 25 C
A
°
V
= 1V
CE
10
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(mA
)
C
V
, COLLECTOR - EMITTER VOLTAGE (V)
Fig. 10 Collector Current vs. Collector-Emitter Voltage
CE
NEW PRODUCT
0
0.2
0.4
0.6
0.8
1.2
1.4
1
0.1
10
1
100
1,000
V
, BAS
E-EM
IT
T
E
R
V
O
L
T
A
G
E (
V
)
BE
I , COLLECTOR CURRENT (mA)
Fig. 12 Base-Emitter Turn-On Voltage
vs. Collector Current
C
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
T = -55 C
A
°
T = 25 C
A
°
V
= 1V
CE
0.01
0.1
10
100
1
0.1
1
10
100
1,000
V,
C
O
LL
E
C
T
O
R
-E
M
IT
T
E
R
S
A
T
URA
TI
O
N
VO
L
T
AG
E
(V
)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 11 Collector-Emitter Saturation Voltage
vs. Collector Current
C
I /I = 1
C B
T = -55 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
1
3
12
9
6
20
12
14
16
18
10
C
/C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
IB
O
O
B
O
V , REVERSE VOLTAGE (V)
Fig. 14 Typical Capacitance Characteristics
R
DS30749 Rev. 4 - 2
5 of 7
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LBN150B01
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0
0.4
0.6
0.2
1.4
0.8
1
1.2
0.1
1
10
100
1,000
V
, BAS
E-
EM
IT
T
E
R
SA
T
U
R
A
T
IO
N V
O
L
T
A
G
E (
V)
BE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 13 Base-Emitter Saturation Voltage
vs. Collector Current
C
V
= 1V
CE
T = 85 C
A
°
T = 25 C
A
°
T = 150 C
A
°
T = -55 C
A
°
T = 125 C
A
°