Electrical characteristics, Fzt651q, A product line of diodes incorporated – Diodes FZT651Q User Manual
Page 4
FZT651Q
Document Number DS36917 Rev. 1 - 2
4 of 7
February 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT651Q
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
80 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
60 — — V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 — — V
I
E
= 100µA
Collector Cut-off Current
I
CBO
—
—
0.1
µA
V
CB
= 60V
—
—
10
V
CB
= 60V, T
A
= +125°C
Emitter Cut-off Current
I
EBO
— — 100 nA
V
EB
= 4V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
— 0.12 0.3
V
I
C
= 1A, I
B
= 100mA
— 0.43 0.6
I
C
= 3A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
— 0.9
1.25 V
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
— 0.8 1.0 V
I
C
= 1A, V
CE
= 2V
DC Current Gain (Note 10)
h
FE
70 200 —
—
I
C
= 50mA, V
CE
= 2V
100 200 300
I
C
= 500mA, V
CE
= 2V
80 170 —
I
C
= 1A, V
CE
= 2V
40 80 —
I
C
= 2A, V
CE
= 2V
Current Gain-Bandwidth Product (Note 10)
f
T
140 175 — MHz
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
Switching Times
t
on
— 45 —
ns
I
C
= 500mA, V
CC
= 10V,
I
B1
= I
B2
= 50mA
t
off
— 800 —
Output Capacitance (Note 10)
C
obo
— — 30 pF
V
CB
= 10V, f = 1MHz
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%