Diodes FZT692B - Manual (Page 4)

FZT692B
Document number: DS33157 Rev. 4 - 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
FZT692B
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
70 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
70 — — V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 — — V I
E
= 100µA
Collector-Base Cutoff Current I
CBO
— — 100 nA V
CB
= 55V
Collector-Emitter Cutoff Current I
CES
— — 100 nA V
CE
= 55V
Emitter Cutoff Current I
EBO
— — 100 nA V
EB
= 5.6V
DC Current Gain (Note 10) h
FE
500
400
150 —
—
— —
—
—
—
I
C
= 100mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 10) V
CE(sat)
—
—
— —
—
— 0.15
0.5
0.5 V
I
C
= 0.1A, I
B
= 0.5mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 200mA
Base-Emitter Saturation Voltage (Note 10) V
BE(sat)
— — 0.9 V I
C
= 1A, I
B
= 10mA
Base-Emitter Turn-On Voltage (Note 10) V
BE(on)
— — 0.9 V I
C
= 1A, V
CE
= 2V
Input Capacitance C
ibo
— 200 — pF V
EB
= 0.5V, f = 1MHz
Output Capacitance C
obo
— 12 — pF V
CB
= 10V, f = 1MHz
Current Gain-Bandwidth Product f
T
150 — — MHz V
CE
= 5V, I
C
= 50mA, f=50MHz
Turn-On Time t
on
— 46 — ns V
CC
= 10V, I
C
= 500mA
I
B1
= -I
B2
= 50mA Turn-Off Time t
off
— 1440 — ns
Note:10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.