Diodes FZT751 - Manual (Page 2)

FZT751
Document Number DS32208 Rev. 7 - 2
2 of 7
www.diodes.com
January 2013
© Diodes Incorporated
FZT751
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-80 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I
C
-3 A
Peak Pulse Current I
CM
-6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
2 W
(Note 7) 3 W
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
62.5 °C/W
(Note 7) 41.7 °C/W
Thermal Resistance, Junction to Leads (Note 8) R
θJL
12.93 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 7. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
8. Same as note (7), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.