Diodes FZT560 - Manual (Page 4)

FZT560
Document Number DS33140 Rev. 2 - 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
FZT560
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-500   V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
-500   V I
C
= -1mA
Emitter-Base Breakdown Voltage BV
EBO
-7   V I
E
= -100µA
Collector Cut-off Current I
CBO
  -100 nA V
CB
= -500V
Collector Cut-off Current I
CES
  -100 nA V
CE
= -500V
Emitter Cut-off Current I
EBO
  -100 nA V
EB
= -5.6V
Collector-Emitter Saturation Voltage (Note 10) V
CE(sat)
  -200
mV
I
C
= -20mA, I
B
= -2mA
  -500 I
C
= -50mA, I
B
= -10mA
Base-Emitter Saturation Voltage (Note 10) V
BE(sat)
  -900 mV I
C
= -50mA, I
B
= -10mA
Base-Emitter Turn-On Voltage (Note 10) V
BE(on)
  -900 mV I
C
= -50mA, V
CE
= -10V
DC Current Gain (Note 10) h
FE
100  300

I
C
= -1mA, V
CE
= -10V
80  300  I
C
= -50mA, V
CE
= -10V

15  I
C
= -100mA, V
CE
= -10V
Current Gain-Bandwidth Product f
T
60   MHz
V
CE
= -20V, I
C
= -10mA
f = 50MHz
Turn-On Time t
on
 110  ns V
CC
= -100V, I
C
= -50mA
I
B1
= -5mA, I
B2
= 10mA Turn-Off Time t
off
 1.5  µs
Output Capacitance C
obo
  8 pF V
CB
= -20V, f = 1MHz
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%