Fzt658, Electrical characteristics – Diodes FZT658 User Manual
Page 4
FZT658
Document Number DS33153 Rev. 5 - 2
4 of 7
May 2013
© Diodes Incorporated
FZT658
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
400
−
−
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
400
−
−
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7
−
−
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
−
−
100
nA
V
CB
= 320V
Emitter Cut-off Current
I
EBO
−
−
100
nA
V
EB
= 6V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
−
−
0.30
V
I
C
= 20mA, I
B
= 1mA
0.25
I
C
= 50mA, I
B
= 5mA
0.50
I
C
= 100mA, I
B
= 10mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
−
−
0.9
V
I
C
= 100mA, I
B
= 10mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
−
−
1.0
V
I
C
= 100mA, V
CE
= 5V
DC Current Gain (Note 9)
h
FE
50
−
−
−
I
C
= 1mA, V
CE
= 5V
50
−
−
I
C
= 100mA, V
CE
= 5V
40
−
−
I
C
= 200mA, V
CE
= 10V
Current Gain-Bandwidth Product (Note 9)
f
T
50
−
−
MHz
V
CE
= 20V, I
C
= 10mA,
f = 20MHz
Output Capacitance (Note 9)
C
obo
−
10
−
pF
V
CB
= 20V, f = 1MHz
Switching Times
t
on
−
130
−
ns
I
C
= 100mA, V
CC
= 100V
I
B1
= 10mA, I
B2
= -20mA
t
off
−
3,300
−
Note:
9. Measured under pulsed conditions. Pulse width • 300µs. Duty cycle • 2%