Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG6968UTS User Manual

Page 2: Dmg6968uts

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DMG6968UTS

Document number: DS31793 Rev. 5 - 2

2 of 6

www.diodes.com

March 2012

© Diodes Incorporated

DMG6968UTS






Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 4)

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

5.2
3.5

A

Pulsed Drain Current

I

DM

30 A





Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 4)

P

D

1.0 W

Thermal Resistance, Junction to Ambient @T

A

= 25°C

R

θJA

125 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C





Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage

BV

DSS

20 - - V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current

I

DSS

- -

1.0

μA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - 10

μA

V

GS

= ±10V, V

DS

= 0V

Gate-Source Breakdown Voltage

BV

SGS

±12 - - V

V

DS

= 0V, I

G

= ±250

μA

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

V

GS(th)

0.35 - 0.95 V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

-
-
-

18
21
26

23
27
34

m

V

GS

= 4.5V, I

D

= 6.5A

V

GS

= 2.5V, I

D

= 5.5A

V

GS

= 1.8V, I

D

= 3.5A

Forward Transfer Admittance

|Y

fs

|

- 13 - S

V

DS

= 5V, I

D

= 5A

Diode Forward Voltage

V

SD

- 0.7

1.0 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

-

143

- pF

V

DS

=10V, V

GS

= 0V f = 1.0MHz

Output Capacitance

C

oss

-

74

- pF

Reverse Transfer Capacitance

C

rss

-

29

- pF

Gate Resistance

R

g

- 202 -

V

DS

=0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

-

8.8

- nC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 6.5A

Gate-Source Charge

Q

gs

-

1.4

- nC

Gate-Drain Charge

Q

gd

-

3.0

- nC

Turn-On Delay Time

t

D(on)

-

53

- ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 10

Ω, R

G

= 6

Turn-On Rise Time

t

r

-

78

- ns

Turn-Off Delay Time

t

D(off)

-

562

- ns

Turn-Off Fall Time

t

f

-

234

- ns

Notes:

4. Device mounted on FR-4 PCB.

5. Short duration pulse test used to minimize self-heating effect.








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