Diodes DMG8822UTS - Manual (Page 2)

DMG8822UTS
Document number: DS31798 Rev. 2 - 2
2 of 6
www.diodes.com
June 2009
© Diodes Incorporated
DMG8822UTS
NEW PROD
UC
T
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
- - 1.0 μA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.5 - 0.9 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
19
22
28 25
29
37
m Ω
V
GS = 4.5V, I D = 8.2A
V
GS
= 2.5V, I
D
= 3.3A
V
GS
= 1.8V, I
D
= 2.0A
Forward Transfer Admittance |Y
fs
| - 7 - S V
DS
= 10V, I
D
= 4A
Diodes Forward Voltage V
SD
- 0.7 0.9 V Is = 2.25A, V
GS
= 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C iss
- 841 - pF
V DS = 10V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 88 - pF
Reverse Transfer Capacitance C
rss
- 81 - pF
Gate Resistance R
g
- 1.24 - Ω V
DS
=0V, V
GS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
- 9.6 - nC
V GS = 4.5V, V DS = 10V,
I D = 8.2A
Gate-Source Charge Q gs
- 1.4 - nC
Gate-Drain Charge Q
gd
- 2.1 - nC
Turn-On Delay Time t
D(on)
- 7.8 - ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 10 Ω, R
G
= 6 Ω
Turn-On Rise Time t
r
- 21.1 - ns
Turn-Off Delay Time t
D(off)
- 38.6 - ns
Turn-Off Fall Time t
f
- 10.1 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
0
10
20
30
0 0.5 1 1.5 2
V = 1.5V
GS
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 2.8V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
0
5
10
15
20
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A