Diodes DMG8822UTS - Manual (Page 3)

DMG8822UTS
Document number: DS31798 Rev. 2 - 2
3 of 6
www.diodes.com
June 2009
© Diodes Incorporated
DMG8822UTS
NEW PROD
UC
T
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
0
0.01
0.02
0.03
0.04
0.05
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
DS
(O
N)
Ω
V = 1.8V
GS
V = 4.5V
GS
V = 2.5V
GS
0 5 10 15 20
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
0
0.01
0.02
0.03
0.04
0.05
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N)
Ω
V = 4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, D
R
AIN-
SOUR
CE
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
L
IZ
E
D)
DS
(O
N)
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0
0.01
0.02
0.03
0.04
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A