Diodes DMG9926USD User Manual

Dmg9926usd new prod uc t, Product summary, Description

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background image

DMG9926USD

Document number: DS31757 Rev. 5 - 2

1 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMG9926USD

NEW PROD

UC

T

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

V

(BR)DSS

R

DS(ON)

max

I

D

max

T

A

= +25°C

20V

24mΩ @ V

GS

= 4.5V

8A

29mΩ @ V

GS

= 2.5V

5.5A

37mΩ @ V

GS

= 1.8V

4.8A

Description

This MOSFET has been designed to minimize the on-state
resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management
applications.

Applications

Power Management Functions

 DC-DC

Converters

Features

 Low

On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case:

SO-8

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208

Weight: 0.072g (approximate)















Ordering Information

(Note 4)

Part Number

Case

Packaging

DMG9926USD-13

SO-8

2,500/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.



Marking Information
















TOP VIEW

Internal Schematic

TOP VIEW

S1

D2

S2

D1

G2

G1

D1

D2

D1

S1

G1

N-Channel MOSFET

D2

S2

G2

N-Channel MOSFET

1

4

8

5

N9926UD

YY WW

Shanghai A/T Site

1

4

8

5

N9926UD

YY

WW

Chengdu A/T Site

= Manufacturer’s Marking
N9926UD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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