Dmg9926usd new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG9926USD User Manual

Page 2: Electrical characteristics

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DMG9926USD

Document number: DS31757 Rev. 5 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMG9926USD

NEW PROD

UC

T



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

8

V

Drain Current (Note 5) Steady
State

T

A

= +25°C

T

A

= +70°C

I

D

8

6.7

A

Pulsed Drain Current (Note 6)

I

DM

30 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

1.3 W

Thermal Resistance, Junction to Ambient

R

θJA

96 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

20

V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

1

μA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

100

nA

V

GS

=

8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.5

0.9 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

19
23
29

24
29
37

mΩ

V

GS

= 4.5V, I

D

= 8.2A

V

GS

= 2.5V, I

D

= 3.3A

V

GS

= 1.8V, I

D

= 2A

Forward Transfer Admittance

|Y

fs

|

7

S

V

DS

= 10V, I

D

= 4A

Diode Forward Voltage

V

SD

0.5

0.9 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

867

pF

V

DS

= 15V, V

GS

= 0V

f = 1MHz

Output Capacitance

C

oss

85

pF

Reverse Transfer Capacitance

C

rss

81

pF

Gate Resistance

R

G



1.29



V

GS

= 0V, V

DS

= 0V, f = 1MHz

SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge

Q

g

8.8

nC

V

GS

= 4.5V, V

DS

= 10V, I

D

= 8.2A

Gate-Source Charge

Q

gs

1.2

nC

Gate-Drain Charge

Q

gd

3

nC

Turn-On Delay Time

t

d(on)

13.2

ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 10

, R

G

= 6Ω

Turn-On Rise Time

t

r

12.6

ns

Turn-Off Delay Time

t

d(off)

64.8

ns

Turn-Off Fall Time

t

f

21.7

ns

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by function temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.











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