Diodes DMN2004K - Manual

DMN2004K
Document number: DS30938 Rev. 9 - 2
1 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
20V
0.55 Ω @ V
GS
= 4.5V 630mA
0.9 Ω @ V
GS
= 1.8V 410mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
 DC-DC Converters
 Power Management Functions
Features and Benefits

Low On-Resistance: R
DS(ON)
= 550
(max)
m Ω @ V
GS
= 4.5V

Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed

Low Input/Output Leakage

ESD Protected up to 2KV
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
 Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals:
Finish
 Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number Case Packaging
DMN2004K-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
D
G S
Top View
NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
ESD PROTECTED TO 2kV
Source
Gate
Protection
Diode
Gate
Drain
Equivalent Circuit
Shanghai A/T Site Chengdu A/T Site
e3
Y
YM
NAB
YM NAB
YM