Diodes DMN2004K - Manual (Page 2)

DMN2004K
Document number: DS30938 Rev. 9 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004K
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
630
450
mA
Drain Current (Note 5) V
GS
= 1.8V
Steady
State
T
A
= +25°C
T A = +85°C
I
D
410
300
mA
Pulsed Drain Current (Note 6) I
DM
1.5 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance, Junction to Ambient R θJA 357 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV DSS
20   V V GS = 0V, I D = 10µA
Zero Gate Voltage Drain Current I
DSS
  1 µA V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage I
GSS
  1 µA V
GS
= 4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS(th)
0.5  1.0 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)

0.4
0.5

0.7
0.55
0.70
0.9
Ω
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance |Y
fs
| 200   ms V
DS
=10V, I
D
= 0.2A
Source Current I S
  0.5 A 
Diode Forward Voltage (Note 7) V
SD
0.6  1 V V
GS
= 0V, I
S
= 500mA
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
  150 pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
  25 pF
Reverse Transfer Capacitance C
rss
  20 pF
Gate Resistance R
g
 292  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q g
 0.9 
nC V
DS
= 15V, V
GS
= 4.5V, I
D
= 0.5A Gate-Source Charge Q
gs
 0.2 
Gate-Drain Charge Q gd
 0.2 
Turn-On Delay Time t
D(on)
 5.7 
ns
V
GS
= 8V, V
DS
= 15V,
R
G
= 6  , R
L
= 30 
Turn-On Rise Time t
r
 8.4 
Turn-Off Delay Time t
D(off)
 59.4 
Turn-Off Fall Time t
f
 37.6 
Body Diode Reverse Recovery Time t rr
 5.5  ns I S = 0.5A, dI/dt = -100A/µs
Body Diode Reverse Recovery Charge Q
rr
 0.85  nC I
S
= 0.5A, dI/dt = -100A/µs
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Pulse width ≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.