Diodes DMN2005DLP4K - Manual

DMN2005DLP4K
Document number: DS30801 Rev. 9 - 2
1 of 5
www.diodes.com
June 2012
© Diodes Incorporated
DMN2005DLP4K
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
Ultra Low Profile Package
• Low On-Resistance
•
Very Low Gate Threshold Voltage, 0.9V Max.
•
Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
•
ESD Protected Gate
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case:
X2-DFN1310-6
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
• Terminals:
Finish
⎯ NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Ordering Information
(Note 4)
Part Number Case Packaging
DMN2005DLP4K-7 X2-DFN1310-6 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X2-DFN1310-6
Top View
Internal Schematic
S
1
G
1
S
2
G
2
D
2
D
1
e4
ESD PROTECTED
DL = Product Type Marking Code
DL