Diodes DMN2005DLP4K User Manual
Page 3
DMN2005DLP4K
Document number: DS30801 Rev. 9 - 2
3 of 5
June 2012
© Diodes Incorporated
DMN2005DLP4K
R
, DRA
IN-
S
OURCE
ON-
RESI
ST
ANCE
(
)
DS
(O
N)
Ω
0.2
0.4
0.6
0.8
0
0
0.4
0.8
1.2
1.6
2.0
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
V
= 1.8V
GS
V
= 4.5V
GS
V
= 2.5V
GS
0
0.2
0.4
0.6
0.8
0
0.4
0.8
1.2
1.6
I , DRAIN CURRENT (A)
Figure 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N
)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
Figure 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
E
S
IST
AN
C
E
(
N
O
R
M
A
L
IZE
D
)
DS
(O
N)
V
= 2.5.V
I = 500mA
GS
D
V
= 4.5V
I = 1.0A
GS
D
0
0.2
0.4
0.6
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N)
Ω
Figure 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
V
= 4.5V
I = 1.0A
GS
D
V
= 2.5V
I = 500mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE TH
RESHO
L
D VOL
T
AG
E
(
V)
GS(
T
H
)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
0.2
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A